Czochralski silicon detectors irradiated with 24GeV=c and 10MeV protons
نویسندگان
چکیده
We have irradiated Czochralski silicon (Cz-Si) and Float Zone silicon (Fz-Si) detectors with 24GeV=c and 10MeV protons. Samples were characterized with Capacitance-Voltage measurements (CV), Transient Current Technique (TCT) and secondary electron backscattering recorded by Scanning Electron Microscope (SEM). We present the evolution of the effective doping concentration as a function of irradiation fluence as well as the introduction rate of negative space charge, b-parameter. According to these measurements, we found that Cz-Si is more radiation hard than Fz-Si. Both TCT and SEM measurements indicated that Space Charge Sign Inversion (SCSI) occurred in the heavily irradiated Fz-Si and in the Cz-Si irradiated with 10MeV protons. However, the SCSI did not take place in Cz-Si irradiated with 24GeV=c protons even after high irradiation fluence. r 2006 Elsevier B.V. All rights reserved.
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